首页> 外国专利> Plasma-assisted treatment of given substrate surface area, e.g. for structurizing or coating metal, alloy, semiconductor, insulator or dielectric, uses insulator with opening, to form discharge gap, between electrode and substrate

Plasma-assisted treatment of given substrate surface area, e.g. for structurizing or coating metal, alloy, semiconductor, insulator or dielectric, uses insulator with opening, to form discharge gap, between electrode and substrate

机译:给定基材表面积的等离子体辅助处理用于结构化或涂覆金属,合金,半导体,绝缘体或电介质,使用带开口的绝缘体,在电极和基板之间形成放电间隙

摘要

Plasma-assisted treatment of predetermined surface areas of a substrate involves operating a gas discharge without dielectric barriers by applying a potential at 2 electrodes and placing an insulator between one electrode and either the substrate or an ancillary electrode, so that there is a discharge gap at the given area, formed by openings in the insulator and ancillary electrode. An independent claim is also included for equipment used for this type of treatment.
机译:等离子体辅助处理衬底的预定表面积涉及通过在两个电极上施加电势并将绝缘体置于一个电极与衬底或辅助电极之间,从而在无介电势垒的情况下进行气体放电,从而在衬底处存在放电间隙。给定区域,由绝缘子和辅助电极中的开口形成。对于用于此类治疗的设备也包括独立索赔。

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