ZrSiO_4 ceramics for microwave integrated circuit applications

摘要

The sintering temperature of ZrSiO_4 ceramic was optimized by studying the variation of density as a function of temperature. The dielectric properties were investigated at the radio and microwave frequencies. It has ε_r = 10.5, tan δ = 0.0016 (at 1 MHz). ε_r = 7.4, tan δ = 0.0006 (at 5.15 GHz) and T_ε = 225 ppm/℃ (at 1 MHz). The ceramic exhibited a negative coefficient of thermal expansion (CTE) of - 2.4 ppm/℃ in the temperature range of 30-800 ℃.