DNA Functionalization of Carbon Nanotubes for Ultrathin Atomic Layer Deposition of High kappa Dielectrics for Nanotube Transistors with 60 mV/Decade Switching

摘要

Single-walled carbon nanotubes (SWNTs) are advanced quasi-1D materials for future high performance electronics.SWNT field effect transistors (FETs) outperform state-of-the-art Si FETs owing to near ballistic electrical transport,chemical robustness,lack of surface dangling bonds,and sustained electrical properties when integrated into realistic device structures.One of the goals of transistor down-scaling is to obtain low subthreshold swing 5 approaching the theoretical limit of 60 mV/decade for device operations at low voltages and power dissipations.