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首页> 外文期刊>Journal of Science of the Hiroshima University >Specific Heat Study of Energy Gap Formation in CeNiSn and CeRhSb
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Specific Heat Study of Energy Gap Formation in CeNiSn and CeRhSb

机译:CeNiSn和CeRhSb中能隙形成的比热研究

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摘要

Specific heat of dense-Kondo compounds CeNiSn, CeRhSb and alloys CeNi_(1-x)Pt_xSn (x = 0.03, 0.06, 0.12, 0.20 and 0.33) and CeNi_(1-y)Co_ySn (y = 0.03 and 0.10) has been measured between 1.3 and 60 K in order to elucidate the mechanism of the energy gap formation in these compounds. The magnetic specific heat divided by temperature C_m/T of CeNiSn and CeRhSb marks a maximum at T_(max) and substantially decreases at low temperatures. This characteristic behavior is attributed to the energy gap opening in the heavy quasiparticle band developed by the dense Kondo effect. Here, T_(max) is proportional to the gap energy which is revealed by fitting C_m/T based on a model of the density of states with a V-shaped gap. On the other hand, C_m/T of CeNi_(1-x)Pt_xSn and CeNi_(1-y)Co_ySn shows that the energy gap is gradually suppressed with increasing both x and y. We estimated the Kondo temperature T_K of these materials from the magnetic entropy S_m estimated by integrating C_m/T with T. obtained values of T_K for CeNiSn and CeRhSb are 51 and 89 K, respectively. For CeNi_(1-x)Pt_xSn and CeNi_(1-y) Co Sn, T_K decreases with increasing x whereas increases with increasing y. C_m/T was analyzed using the reduced temperature T = T/T_K. A C_m/T versus T plot of the data was found to be nearly identical for CeNiSn and CeRhSb. The maximum in C_m/T is characterized by (C_m/T)_(max) ~πR/3 and T_(max) ~0.1. This implies that the gap energy is determined by a single characteristic temperature T_K. The same plot for alloys indicates that the energy gap suppression occurs similarly both in CeNi_(1-x)Pt_xSn and CeNi_(1-y)Co_ySn; T_(max) decreases with increasing x and y while (C_m/T)_(max) remains almost constant. The decrease of T_(max) indicates the reduction of the gap energy due to the disturbance of coherent scattering in the Kondo lattice. CeNiSn and CeRhSb are classified as a new type of semiconductors with the coherence gap, which opens at low temperatures.
机译:已测量了稠密的近藤化合物CeNiSn,CeRhSb和合金CeNi_(1-x)Pt_xSn(x = 0.03、0.06、0.12、0.20和0.33)和CeNi_(1-y)Co_ySn(y = 0.03和0.10)的比热为了阐明这些化合物中能隙形成的机理,在1.3 K和60 K之间磁比热除以CeNiSn和CeRhSb的温度C_m / T在T_(max)处最大,而在低温下则显着降低。该特征行为归因于由密集的近藤效应产生的重的准粒子带中的能隙开口。在此,T_(max)与通过具有V形间隙的状态密度模型拟合C_m / T而显示的间隙能量成比例。另一方面,CeNi_(1-x)Pt_xSn和CeNi_(1-y)Co_ySn的C_m / T表明,随着x和y的增加,能隙逐渐被抑制。我们通过将C_m / T与T积分而得出的磁熵S_m估算了这些材料的近藤温度T_K。获得的CeNiSn和CeRhSb的T_K值分别为51 K和89K。对于CeNi_(1-x)Pt_xSn和CeNi_(1-y)Co Sn,T_K随着x的增加而减小,而随着y的增加而增大。使用降低的温度T = T / T_K分析C_m / T。发现CeNiSn和CeRhSb的数据的C_m / T对T图几乎相同。 C_m / T的最大值以(C_m / T)_(max)〜πR/ 3和T_(max)〜0.1为特征。这意味着,间隙能量由单个特征温度T_K确定。相同的合金图表明,CeNi_(1-x)Pt_xSn和CeNi_(1-y)Co_ySn中的能隙抑制作用相似。 T_(max)随着x和y的增加而减小,而(C_m / T)_(max)几乎保持恒定。 T_(max)的减小表示由于近藤晶格中相干散射的扰动而引起的带隙能量的减小。 CeNiSn和CeRhSb被归类为具有相干间隙的新型半导体,该相干间隙在低温下会打开。

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