...
机译:(0 0 1)Si衬底上Ga(NAsP)/(BGa)P多量子阱结构的异质界面性质与光致发光效率的相关性
NAsP Ⅲ/Ⅴ GmbH, 35041 Marburg, Germany;
Material Sciences Center and Faculty of Physics, Philipps-University, 35032 Marburg, Germany;
Material Sciences Center and Faculty of Physics, Philipps-University, 35032 Marburg, Germany;
Material Sciences Center and Faculty of Physics, Philipps-University, 35032 Marburg, Germany;
Robert Bosch GmbH, 72770 Reutlingen, Germany;
Material Sciences Center and Faculty of Physics, Philipps-University, 35032 Marburg, Germany;
Material Sciences Center and Faculty of Physics, Philipps-University, 35032 Marburg, Germany;
A3: Organometallic vapor phase epitaxy; B1: Dilute nitrides; B2: Semiconducting Ⅲ-Ⅴ materials; B3: Laser diodes; B3: Optoelectronic integrated circuits;
机译:Gav(nasp)/(bga)p多量子阱结构在(001)硅衬底上的单片集成
机译:Si(001)衬底上生长的Ga(NAsP)量子阱快速热退火过程中纳米结构与光电性能的相关性
机译:在4H-SiC衬底上生长的AIGaN / AIN / GaN高电子迁移率晶体管结构的时间分辨光致发光特性
机译:在MOVPE生长的硅衬底上单片集成Ga(NAsP)/(BGa)P QW激光器的激光特性
机译:使用光致发光,x射线衍射,光反射和拉曼光谱法,对磷化铟和砷化铟镓HEMT结构上的块状砷化铟镓的基本材料参数进行高精度关联
机译:固态照明的具有优异量子效率和热稳定性的发红光磷灰石型磷光体NaY9(SiO4)6O2:Sm3 +的结构和光致发光特性
机译:在4H-SiC衬底上生长的AlGaN / AlN / GaN高电子迁移率晶体管结构的时间分辨光致发光特性