Lasing properties of monolithically integrated Ga(NAsP)/(BGa)P QW lasers on a silicon substrate grown by MOVPE

摘要

Lasing operation up to 120K is reported for direct band-gap GaNAsP grown monolithically on a silicon substrate. Jth=0.81kAcm⁻² is measured at 80K with a To of 97K from 40–120K for a HR coated device.