A two-dimensional analytical model of subthreshold behavior to study the scaling capability of deep submicron double-gate GaN-MESFETs

摘要

In this paper, a new deep submicron double-gate (DG) Gallium Nitride (GaN)-MESFET design and its 2-D analytical model have been proposed, investigated and expected to suppress the short-channel-effects (SCEs) and improve the subthreshold behavior for deep submicron GaN-MESFET-based applications. The model predicts that the threshold voltage roll-off, DIBL effects and the subthreshold swing are greatly improved in comparison with the conventional Single-Gate (SG) GaN-MESFETs. The developed approaches are verified and validated by the good agreement found with the 2D numerical simulations for wide range of device parameters and bias conditions. DG GaN-MESFET can alleviate the critical problem and further improve the immunity of SCEs of deep submicron GaN-MESFET-based circuit for future power switching and digital gate devices.