A novel high breakdown voltage LDMOS by protruded silicon dioxide at the drift region

摘要

Breakdown voltage and specific on-resistance are two important parameters in lateral double diffused MOSFET (LDMOS) devices. In order to have a high breakdown voltage, the electric field profile should be uniform. In this paper a dual protruded silicon dioxide in the drift region of LDMOS (DP-LDMOS) is proposed which creates new peaks in the electric field profile and an improvement of the breakdown voltage. Also, a triple P window is considered between these protruded oxides to have the balanced charge in the drift region that helps to have a higher breakdown voltage than a conventional LDMOS transistor. The simulation with two-dimensional ATLAS simulator shows that the proposed DP-LDMOS structure has a low specific on-resistance due to incorporating the protruded oxides in the drift region.