A novel double-gate SOI MOSFET to improve the floating body effect by dual SiGe trench

摘要

In short-channel silicon-on-insulator metal-oxide-semiconductor transistors (SOI MOSFETs) the high electric field near the drain increases the floating-body effect. The aim of this article is to introduce a novel structure that reduces the electric field near the drain, so improving the floating-body effect. In the proposed structure, a dual trench is created in the buried oxide exactly under the junctions of drain/source and channel and is filled with an n-type SiGe material. The dual trench regions absorb the electric field lines and hence, the electric characteristic significantly improve. The proposed structure is named as dual SiGe trench double gate SOI MOSFET. In addition, we observe a considerable improvement in self-heating effects due to the higher thermal conductivity of SiGe in comparison with silicon dioxide.