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首页> 外文期刊>Journal of circuits, systems and computers >An Energy-Efficient Reliable Heterogeneous Uncore Architecture for Future 3D Chip-Multiprocessors
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An Energy-Efficient Reliable Heterogeneous Uncore Architecture for Future 3D Chip-Multiprocessors

机译:面向未来3D芯片多处理器的高效节能,可靠的异构非核架构

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摘要

Uncore components such as cache hierarchy and on-chip interconnects consume a significant portion of overall energy consumption in emerging embedded processors. In Nanoscale technologies, static power consumption due to leakage current has become a serious issue in the design of SRAM-based on-chip cache memories and interconnections. To address this issue, nonvolatile memory technologies such as STT-RAMs have been proposed as a replacement for SRAM cells due to their near-zero static power and high memory density. Nonetheless, STT-RAMs suffer from some failures such as read-disturb and limited endurance as well as high switching energy. One effective way to decrease the STT-RAMs' switching energy is to reduce their retention time; however, reducing the retention time has a negative impact on the reliability of STT-RAM cells. In this paper, we propose a heterogeneous last level cache (LLC) architecture for 3D embedded chip-multiprocessors (3D eCMPs) which employs two types of STT-RAM memory banks with retention time of is and 10ms to provide a beneficial trade-off between reliability, energy consumption, and performance. To this end, we also propose a convex optimization model to find the optimal configurations for these two kinds of memory banks. In parallel with hybrid memory architecting, optimizing the number and placement of through silicon vias (TSVs) as a main component of on-chip interconnection for building 3D CMPs is another important target of the proposed optimization approach. Experimental results show that the proposed method improves the energy-delay products and throughput by about 69% and 34.5% on average compared with SRAM configurations.
机译:诸如缓存层次结构和片上互连之类的非核心组件在新兴的嵌入式处理器中消耗了总能耗的很大一部分。在纳米技术中,由于漏电流引起的静态功耗已成为基于SRAM的片上高速缓存存储器和互连设计中的一个严重问题。为了解决这个问题,已经提出了诸如STT-RAM之类的非易失性存储技术来替代SRAM单元,因为它们的静态功率接近于零并且具有高存储密度。尽管如此,STT-RAM仍遭受一些故障,例如读取干扰和有限的耐用性以及高开关能量。减少STT-RAM切换能量的一种有效方法是减少其保留时间。然而,减少保留时间对STT-RAM单元的可靠性有负面影响。在本文中,我们提出了一种用于3D嵌入式芯片多处理器(3D eCMP)的异构最后一级缓存(LLC)架构,该架构采用两种类型的STT-RAM存储体,其保留时间为10ms,在10ms之内提供了一种有益的折衷方案。可靠性,能耗和性能。为此,我们还提出了一个凸优化模型,以找到这两种存储库的最佳配置。与混合内存架构设计并行,优化作为构建3D CMP的片上互连的主要组成部分的硅通孔(TSV)的数量和位置是所提出的优化方法的另一个重要目标。实验结果表明,与SRAM配置相比,该方法平均将能量延迟产品和吞吐量提高了约69%和34.5%。

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