首页> 外文期刊>IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control >A general approximated two-dimensional model for piezoelectric array elements
【24h】

A general approximated two-dimensional model for piezoelectric array elements

机译:压电阵列元件的通用近似二维模型

获取原文
获取原文并翻译 | 示例
           

摘要

In this paper we describe an approximate two-dimensional model of a single piezoelectric array element. Substantially, the element is a two-dimensional structure whose vibrations can be described by two coupled differential wave equations with coupled boundary conditions. We take as a solution of this system two orthogonal wave functions which depend only on one axis, corresponding to the propagation direction, and which satisfy the boundary conditions only in an integral form. This solution makes it necessary to neglect the piezoelectric coupling in the transverse direction; nevertheless this approximation does not substantially affect the computed results because the transverse elastic coupling is much stronger than the piezoelectric one. With our model, the external behavior of the element in the frequency domain can be described by a 5/spl times/5 matrix from which all the transfer functions of the element can be easily computed. We compared our results with those of the classical Mason-Sittig one dimensional model, finding, as expected, a small difference in the principal thickness resonance frequency and the presence of a lateral mode. To verify the results obtained with our model, we computed the frequency spectrum of the element varying the width/thickness ratio. We found a good agreement with the low branch of the spectrum computed by the coupled mode theory. Finally, we computed, in the frequency domain, the dynamic electromechanical coupling coefficient k/sub U/, evaluating the internal energy distribution of the element and applying the definition reported by Berlincourt. We compared the values at resonance with the appropriate quasistatic coupling factors k/sub 33/' and k/sub 31/' and with the effective coupling factor k/sub eff/ computed by the same model.
机译:在本文中,我们描述了单个压电阵列元件的近似二维模型。基本上,该元件是二维结构,其振动可以通过具有耦合边界条件的两个耦合微分波方程来描述。我们采用该系统的两个正交波函数作为解决方案,它们仅依赖于一个轴,对应于传播方向,并且仅以整数形式满足边界条件。该解决方案使得必须在横向上忽略压电耦合。但是,由于横向弹性耦合比压电耦合强得多,因此这种近似不会显着影响计算结果。使用我们的模型,可以通过5 / spl times / 5矩阵描述元素在频域中的外部行为,从中可以轻松计算出元素的所有传递函数。我们将我们的结果与经典的Mason-Sittig一维模型进行了比较,正如预期的那样,发现主厚度共振频率和横向模式的存在很小的差异。为了验证通过我们的模型获得的结果,我们计算了改变宽度/厚度比的元素的频谱。我们发现与耦合模式理论计算的频谱的低分支有很好的一致性。最后,我们在频域中计算了动态机电耦合系数k / sub U /,评估了元素的内部能量分布并应用了Berlincourt报告的定义。我们将共振时的值与适当的准耦合因子k / sub 33 /'和k / sub 31 /'以及由同一模型计算出的有效耦合因子k / sub eff /进行了比较。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号