Characterization of dielectric and electro-optic properties of PLZT9/65/35 films on sapphire for electro-optic applications

摘要

Lead lanthanum zirconate titanate (PLZT) thin films were depositednon r-plane sapphire at low temperatures by RF triode magnetronnsputtering using lead compensated hot-pressed targets. To obtain fullynperovskite phase in the films, two types of post-deposition processingnwere investigated: rapid thermal annealing (RTA) and furnace annealingn(FA). Dielectric and electro-optic properties of PLZT films were foundnto be strongly dependent on annealing conditions. The peak dielectricnconstant of the films were 1200 and 2800 with Curie temperatures ofn110°C and 190°C after RTA and FA processing, respectively. Thendielectric losses in the films were fairly low; tan deltas were lessnthan 0.02 after RTA and less than 0.04 after FA processing. The filmsnshowed good optical transmission characteristics after annealing and annanomalously large effective quadratic electro-optic effect was observednin one furnace annealed film