New seed geometry for growth of low dislocation synthetic quartz

摘要

A method to grow low dislocation density synthetic quartz by usingna special cutting seed geometry is reported. With this method, anrelatively high dislocation density seed material is allowable. For suchna purpose, a seed of new geometry was prepared and grown in a standardnhydrothermal growth condition, long in Y-direction with multiplenV-shaped notches made on Z-face. The characterization study wasnconducted by X-ray topography. The results showed new growth regions,nequal to the numbers of V-shaped notches made in the seed and usuallynnot found in the conventional Y- and Z-bar synthetic quartz crystals.nEach new growth region is composed of two sectors of distinct textures.nSoon they disappear due to their high growth velocity, and they arenreplaced by the so-called Z-region. However, the growth process of thesennew sectors grown perpendicular to the internal faces of the V-shapednnotches played an important role in inhibiting the propagation of thendislocation originally present in the seed into the grown Z-region