A study of vacancy-related defects in (Pb,La)(Zr,Ti)O3thin films using positron annihilation

摘要

The formation of vacancy-type defects in La-doped lead zirconatentitanate (PLZT) thin films (Zr/Ti=20/80) was studied as a function ofnlanthanum doping and after cooling in an oxygen-reduced ambient. Thenchanges in the Doppler-broadening S parameter are consistent with thenprogressive introduction of Pb-vacancies upon La-doping. Cooling of PLZTnthin films with 0 and 10% La doping in 10-5 Torr oxygennpartial pressure after growth exhibits an increase in the density ofnvacancy-type defects compared to films cooled in 760 Torr. It isnproposed that the defects formed are likely cation-oxygen vacancyncomplexes