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首页> 外文期刊>IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control >Narrowband impedance matching layer for high efficiency thickness mode ultrasonic transducers
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Narrowband impedance matching layer for high efficiency thickness mode ultrasonic transducers

机译:用于高效厚度模式超声换能器的窄带阻抗匹配层

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摘要

A new matching layer design concept has been proposed for narrowband continuous wave (CW) devices. Analysis has shown that the mechanical impedance of a resonant-type transducer in thickness mode CW operation does not equal its acoustic impedance /spl rho/Vs but roughly equals /spl rho/Vs/Q, where /spl rho/ is density, Vs is acoustic velocity, and Q is the mechanical quality factor. The value of /spl rho/Vs/Q is much lower than the acoustic impedance of water for any transducer material, including lead zirconium titanate (PZT), single crystals, or polyvinylidene fluoride (PVDF). With this new approach, the impedance of the matching layer must also be between water and /spl rho/Vs/Q, but there are few such practical low impedance materials. To realize equivalent low impedance structure, a novel double layer design is presented: a relatively low impedance material (such as polyethylene or polyurethane) on the inside and a relatively high impedance material (such as polyester or metal) on the outside. A high power CW transducer structure was designed and fabricated with PVDF-TrFE (polyvinylidene fluoride trifluoroethylene) to operate at 1.4 MHz.
机译:针对窄带连续波(CW)器件提出了一种新的匹配层设计概念。分析表明,厚度模式连续波操作中谐振型换能器的机械阻抗不等于其声阻抗/ spl rho / Vs,但大致等于/ spl rho / Vs / Q,其中/ spl rho /是密度,Vs是声速,而Q是机械品质因数。 / spl rho / Vs / Q的值远远低于任何换能器材料(包括钛酸锆锆(PZT),单晶或聚偏二氟乙烯(PVDF))的水声阻抗。使用这种新方法,匹配层的阻抗也必须介于水和/ v / Q之间,但是很少有这种实用的低阻抗材料。为了实现等效的低阻抗结构,提出了一种新颖的双层设计:内部使用相对较低阻抗的材料(例如聚乙烯或聚氨酯),外部使用相对较高阻抗的材料(例如聚酯或金属)。使用PVDF-TrFE(聚偏二氟乙烯三氟乙烯)设计并制造了大功率连续波传感器结构,以在1.4 MHz下工作。

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