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首页> 外文期刊>IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control >A comparison between conventional and collapse-mode capacitive micromachined ultrasonic transducers in 10-MHz 1-D arrays
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A comparison between conventional and collapse-mode capacitive micromachined ultrasonic transducers in 10-MHz 1-D arrays

机译:10 MHz一维阵列中常规模式和塌陷模式电容式微加工超声换能器的比较

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This paper presents a comprehensive comparison between a collapse-mode and a conventional-mode capacitive micromachined ultrasonic transducer (CMUT); both devices have a 1-;C;m-thick silicon plate and operate at 10 MHz when biased at 100 V. The radii of the circular plates and the gap heights are modified to meet the design specifications required for a fair comparison. Finite element analysis (FEA) shows that the collapse-mode CMUT has higher output pressure sensitivity (46.5 kPa/V) than the conventional CMUT (13.1 kPa/V), and achieves a 3-dB fractional bandwidth (FBW) of 124% compared with 128% for the conventional mode. These results were validated by experiments performed on devices fabricated in a 1-D phased array configuration using the local oxidation of silicon (LOCOS)/wafer-bonding process. The measured output pressure sensitivity and the FBW of the collapse-mode and the conventional CMUTs at 100 V were 26.4 kPa/V and 103% and 12.7 kPa/V and 111%, respectively. The maximum output pressure of the collapse-mode CMUT was 1.19 MPa at 10 MHz, which was much higher than the conventional CMUT (0.44 MPa). However, the second harmonic distortion (SHD) level of the collapse-mode CMUT is higher than the conventional CMUT at the same excitation condition. Even with higher electric field in the cavity, the collapse-mode CMUT was as stable as the conventional CMUT in a long-term test. A 30-h test with a total of 3.2 ?? 109 cycles of 30 V ac excitation resulted in no significant degradation in the performance of the collapse-mode devices.
机译:本文对崩溃模式与常规模式电容微加工超声换能器(CMUT)进行了全面的比较。这两款器件均具有1-C; m厚的硅板,并且在100 V偏置时工作于10 MHz。圆形板的半径和间隙高度均经过修改,以满足公平比较所需的设计规范。有限元分析(FEA)显示,塌陷模式CMUT具有比传统CMUT(13.1 kPa / V)更高的输出压力灵敏度(46.5 kPa / V),并实现了124%的3-dB分数带宽(FBW)。传统模式下为128%。这些结果通过使用硅局部氧化(LOCOS)/晶圆键合工艺在一维相控阵配置中制造的器件上进行的实验得到了验证。在100 V下测得的崩溃模式和常规CMUT的输出压力灵敏度和FBW分别为26.4 kPa / V和103%,12.7 kPa / V和111%。崩溃模式CMUT在10 MHz时的最大输出压力为1.19 MPa,远高于常规CMUT(0.44 MPa)。但是,在相同的激励条件下,崩溃模式CMUT的二次谐波失真(SHD)级别高于常规CMUT。即使在空腔中有较高的电场,在长期测试中,塌陷模式CMUT仍与传统CMUT一样稳定。 30小时的测试,总计3.2 ?? 30 V交流激励的10 9 周期不会导致塌陷模式器件的性能显着降低。

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