K alpha -band MMIC receiver with ion-implanted technology for high-volume and low-cost application

摘要

A monolithic-microwave-integrated-circuit (MMIC) receiver in ion implantation technology, with LNA and mixer integrated circuits (ICs) shows 4.7 dB noise figure and 6.8 dB conversion gain at 35 GHz with a low IF frequency of 10-50 MHz. The data reported are for a receiver in the K alpha -band. The results are for two separate amplifier and mixer ICs combined to form a receiver or downconverter. The authors have successfully demonstrated viable and manufacturable technology that is useful for high volume and cost-effective applications. The measured results show the technology is able to deliver high performance with very good yield.