0.7 W X-Ku-band high-gain, high-efficiency common base power HBT

摘要

Small sized AlGaAs-GaAs HBTs (heterojunction bipolar transistors) have achieved excellent power performance throughout the microwave frequency band. With the implementation of the multi-via-hole design, the HBT performance (gain and efficiency) is maintained as the size increases. A 0.7 W common-base (CB) power HBT with performance around 10 dB gain and 50% PAE well into the Ku band is reported. The performance is comparable to the pseudomorphic HEMT in this frequency range. The yield and uniformity are excellent. The high bias voltage (9.3 V V/sub ce/) is also desirable from a system viewpoint.