Fast Response Solar-Blind Photodetector with a Quasi-Zener Tunneling Effect Based on Amorphous In-Doped Ga2O3 Thin Films

摘要

A high-performance solar-blind photodetector with a metal–semiconductor–metal structure was fabricated based on amorphous In-doped Ga O thin films prepared at room temperature by radio frequency magnetron sputtering. The photodetector shows a high responsivity (18.06 A/W) at 235 nm with a fast rise time (4.9 μs) and a rapid decay time (230 μs). The detection range was broadened compared with an individual Ga O photodetector because of In doping. In addition, the uneven In distribution at different areas in the film results in different resistances, which causes a quasi-Zener tunneling internal gain mechanism. The quasi-Zener tunneling internal gain mechanism has a positive impact on the fast response speed and high responsivity.