Si衬底GaN基功率电子材料及器件的研制

摘要

目前,采用Si上生长氮化镓(GaN)材料这一技术路线制备功率电子器件,已成为业界共识.而这一技术路线最大的挑战就是Si衬底GaN外延生长应力调控、高耐压和导通电阻稳定性控制技术.成功地制备了无裂纹、低翘曲、高导通、均一性好、耐压高的2～8英寸Si衬底GaN外延片,外延材料满足650 V功率器件要求,并在6英寸互补金属氧化物半导体(CMOS)产线上成功开发出650 V,200 mΩ的功率场效应晶体管(FET)器件.%Recently,the industry has reached a consensus on using gallium nitride (GaN)/Si technique route for fabricating the GaN power electronic devices.Primarily,the key technology for epitaxy of GaN based materials on silicon substrate is stress control,high breakdown voltage technique and on resistance stability control technique.A crack-free 2～8 inch GaN/Si epi-wafers are successfully achieved with low warpage,high conductivity,uniformity and breakdown,which meet the requirements of 650 V power device.With the material above,a 650 V/200 mΩ field effect transistor(FET) device is fabricated based on 6 inch complementary metal oxide semiconductor(CMOS) process.