SiC IGBT正向导通特性研究

摘要

SiC绝缘栅双极型晶体管(IGBT)兼具了导通损耗低、开关频率高的显著优势,已成为下一代高压开关器件的重点研究对象.然而,由于高质量的SiC衬底、外延材料制备不易,器件机理及工艺流程较为复杂,研究开发过程比较缓慢.通过针对性的器件物理建模,在此基于Silvaco软件完成了器件的正向导通特性仿真,分析了缓冲层及结型场效应晶体管(JFET)区对器件正向性能的影响,并基于以上结果进行了实际流片,测试结果基本符合理论预期.%Silicon carbide(SiC) insulated gate bipolar transistor(IGBT) has been researched intensively as a nextgeneration high voltage switching power device,for the advantages of low on-state power loss and high switching frequency.However,due to the difficulties in high-quality substrate and epi-layer acquirement,complicated device mechanism and processing,the R&D cycle of SiC IGBT is relatively long.Via a targeted device physics modeling,the on-state characteristics simulation is carried out with Silvaco software,in which the influence of buffer layer and junction fieldeffect transistor(JFET) region are analyzed.The devices are processed afterwards and performed as expected.