SiC结势垒肖特基二极管及JMOS介绍

摘要

介绍了结势垒控制肖特基整流器(JBS)和JBS集成碳化硅金属氧化物半导体场效应晶体管(MOSFET)(SiC JMOS)的特性.JMOS通过将DMOS和JBS合并于单片SiC器件,无需任何额外的工艺和面积.当SiCMOSFET中的寄生体二极管导通时,集成的JBS还可以防止由于注入的少数载流子的复合而导致的位错缺陷转变为堆垛层错的潜在风险.进行特征比较,并构建一个测试平台,以验证SiC JMOS比传统SiC DMOS的效率和可靠性有所提高.实验结果表明,SiC JMOS能以更低的成本和更高的功率密度获得更好的系统性能和可靠性.%A general characteristics introduction of junction barrier controlled Schottky (JBS) rectifier and a JBS integrated silicon carbide metal-oxide-semiconductor field effect transistor (MOSFET)(SiC JMOS) is proposed which merged a DMOS and JBS in a monolithic SiC device without any additional process and area penalty.The integrated JBS could also prevent the potential failure caused by the transformation of dislocation defects into stacking faults due to the recombination of injected minority carriers when parasitic body diode in SiC MOSFET is turned on.The characteristics comparison is made and a testing platform is built to verify the efficiency and reliability improvement of SiC JMOS from conventional SiC DMOS.The experimental result shows that we could gain better system performance and reliability with less cost and higher power density.