基于加速寿命试验的IGBT可靠性预计模型研究

摘要

With the rapid technical development of electronic components,insulated gate bipolar transistor(IGBT) products have attracted considerable attention.Unfortunately,because of the absence of a complete prediction model for IGBT,it has been limited for users in reliability analysis and the accuracy and integrity of works.The temperature cycling test for typical IGBT products is carried out to establish the reality prediction model for the domestic IGBT products.The chip outsourcing,research and development of self-packaged technique,and the failure modes and mechanisms of domestic IGBT products are also reviewed.To quantitatively determine the encapsulation model coefficients of IGBT,three of data processing under the lognormal distribution,including figure estimation,optimal linear unbiased estimation and least square method,a employed.Moreover,the chip model coefficients a characterized on the basis of the analysis of aboard chip failure data.Our results provide valuable technical information for quantitative analysis of reliability for the engineering application of domestic electron components.%随着电子元器件技术的不断发展,绝缘栅双极晶体管(IGBT)己得到了越来越广泛的应用,但其预计模型的缺失或不完善使得用户在可靠性分析过程中缺乏指导,影响工作的完整性和准确性.基于国内IGBT芯片外购、自主封装的研制生产现状及工程应用主要的失效模式、机理,结合国内外主流预计标准及评估方法,建立国产IGBT可靠性预计模型架构.选择典型IGBT开展温度循环试验,利用对数正态分布下的图估计法、最优线性无偏估计及最小二乘法对试验数据进行分析处理,确定封装模型系数定量表征,应用国外芯片失效数据确定芯片模型系数表征,从而完成国产IGBT可靠性预计模型建立,为国产元器件工程应用过程中的可靠性定量分析提供技术参考.