A measurement system was established to study the laser pulse irradiation effects on a plane array Si-CCD at the wavelength of 532 nm and the pulse duration of 170 ps. Experiments on Si-CCD under picosecond laser irradiation were carried out, the typical experiment phenomena were observed and the corresponding energy density thresholds were measured. Furthermore, the microstructure of damaged CCD was observed, and the damage mechanism was analyzed. It was demonstrated that the most severe failures could result from the malfunction of CCD circuits. Experiments on a Si-CCD by laser pulses at the wavelength of 532 nm,800 nm and the pulse duration in 10 ns, 150 fs were carried out, respectively, then the thresholds with different pulse durations were measured and compared. Experimental results indicate that the Si-CCD is disturbed when the laser energy density is between 10 8-10-3 J/cm2 ,and the permanent damage of Si-CCD is observed when laser energy density is larger than 10-1 J/cm2.%开展了532 nm ps激光辐照面阵Si-CCD的实验研究,建立了532 nm,170 ps激光辐照Si-CCD效应实验测量系统,观察到了各种典型的干扰和损伤效应现象并测量了阈值.对破坏后的CCD器件的微观结构进行了显微观察,并深入分析了各种典型实验现象和电路层面的损伤机理.开展了10 ns和150 f,激光对CCD探测器的辐照效应实验,并对不同脉宽激光与CCD相互作用阈值的关系进行了比较分析.实验结果表明:激光能量密度为10-8～10-3 J/cm2时,会干扰CCD成像;激光能量密度超过10-1J/cm2时,则会出现CCD永久性损伤.
展开▼
