基于TiO2/Perovskite/P3HT结构的n-i-p型钙钛矿电池的电极界面优化与器件性能

摘要

以TiO2/钙钛矿(PVSK)/P3 HT的n-i-p型钙钛矿电池作为研究对象,研究了TiO2薄膜退火温度对TiO2薄膜的结晶性、基于此的钙钛矿薄膜的形貌以及光伏器件性能的影响,比较了P3 HT的掺杂以及不同批次P3 HT材料对钙钛矿太阳能电池器件性能的影响.结果表明:TiO2薄膜的退火工艺及P3 HT的批次对器件性能影响较大.TiO2薄膜的制备工艺设为退火温度为300℃,退火时间为45 min,提高TiO2的退火温度到500℃,钙钛矿太阳能电池的效率可提高到11.27%.通过优化钙钛矿薄膜厚度为190 nm,制备得到光电转换效率为6.77%的钙钛矿薄膜光伏电池.基于低温TiO2为电子传输层、掺杂P3HT为空穴传输层的器件性能为开路电压VOC=0.98 V,短路电流JSC=19.94 mA/cm2,填充因子fF=0.42,转换效率η(PCE)=8.18%.TiO2电子传输层和P3 HT空穴传输层的系统优化对制备高性能n-i-p结构钙钛矿电池具有重要意义.%With TiO2/perovskite/P3 HT n-i-p perovskite type battery as research object, effects of thermal annealing temperature of TiO2 film on the crystallinity of TiO2 film,morpholo-gy of perovskite film deposited on the treated TiO2 layer,and the photovoltaic performance of perovskite solar cells were investigated.Performance of perovskite solar cell device was also stud-ied by comparing P3 HT doping and different batches of P3 HT materials.The results clearly show that annealing processing of TiO2 layer and property of P3 HT play important roles in tuning per-ovskite solar cell performance.An optimized annealing condition of 300 ℃ for 45 min for theTiO2 film was obtained.The power conversion efficiency(PCE)was further improved to 11.27%by increasing the thermal annealing temperature of TiO2 layer to 500 ℃.A PCE of 6.77% was a-chieved for the cell with a 190 nm-thick perovskite film layer.By optimizing P3 HT layer with chemical doping and batch screening,an improved device performance of 8.18% with VOC =0.98 V,JSC =19.94 mA/cm2 ,fF =0.42,η(PCE)=8.18% was achieved.The system atic optimiza-tion of TiO2 electronic transport layer and P3 HT hole transport layer is of great significance to the preparation of high performance structure of n-i-p type perovskite battery.