330GHz砷化镓单片集成分谐波混频器

摘要

In the terahertz band,diode size can no longer be ignored compared with the wavelength,significant parasitic parameters will be introduced due to diode package.So it is very necessary to establish three-dimensional model to extract parasitic parameters.Meanwhile manual assembly becomes more difficult,circuit uncertainty will increase.Based on planar Schottky barrier diode designed by China Electronics Technology Group Corporation-13 (CETC-13) and University of Electronic Science and Technology of China(UESTC) fabricated on 12 μm thick suspended GaAs substrate a 330 GHz GaAs monolithic integrated sub-harmonic mixer is presented.Test results show that the minimum conversion loss is 10.4 dB at 328 GHz.SSB conversion loss is less than 14.7 dB from 320 ～ 340 GHz when the LO power is 5 mW.%在太赫兹频段,二极管尺寸与波长相比已不能忽略,二极管的封装会引入很大的寄生参量,因此需建立二极管三维模型提取寄生参数.同时人工装配难度增大,会增加电路不确定性.采用12.μm砷化镓单片集成悬置微带线结构,基于电子科技大学与中国电子科技集团第十三研究所自主联合设计的肖特基二极管研制330 GHz砷化镓单片集成分谐波混频器.实测结果显示在5 mW本振功率的驱动下,在328 GHz可得到最小变频损耗10.4 dB,在320～340 GHz范围内,单边带变频损耗小于14.7 dB.