ZnO纳米棒阵列膜的制备及其光电化学性能研究

摘要

采用化学溶液沉积法,在ZnO纳米颗粒膜修饰的FTO导电玻璃基底上,制备了ZnO纳米棒阵列。用X射线衍射仪（XRD）、场发射扫描电子显微镜（FESEM）、透射电子显微镜（TEM）对样品进行表征。研究结果表明所制备的ZnO纳米棒为六方纤锌矿相单晶结构,沿c轴择优取向生长,平均直径约为40nm,长度约为900nm;ZnO纳米棒阵列生长致密,取向性较一致。以曙红Y敏化的ZnO纳米棒阵列膜为光阳极制作了染料敏化太阳能电池原型器件,在光照强度为100mW/cm2下,其开路电压为0.418V,短路电流为0.889mA/%ZnO nanorod arrays were prepared by chemical solution deposition on pre-modified FTO substrate with ZnO nanoparticles.X-ray diffraction（XRD）,field emission scanning electron microscopy（FESEM） and transmission electron microscopy（TEM） were used to characterize the ZnO nanorod arrays.The as-prepared ZnO nanorods are hexagonal wurtzite single-crystalline structure and grow along c-axis.The individual ZnO nanorod is about 40nm wide and 900nm long.The nanorod arrays are dense arranged and consistent oriented.Using the ZnO nanorods array film sensitized by eosin Y as the photoelectrode,we fabricated dye-sensitized solar cell device,which exhibits an open-circuit photovoltage of 0.418V,a short-circuit photocurrent density of 0.889mA/cm2,and an overall conversation efficiency of 0.133% under an AM-1.5 illumination at 100mW/cm2.