化学机械抛光（CMP）过程中抛光盘温度控制的分析研究

摘要

The temperature is one of the main factors which have an effect on the sapphire polishing in the CMP process.In order to meet the requirements of CMP,we need to use a reasonable method for temperature control and control the temperature within a certain range.This paper expounds the reason of the heat during the CMP process,and presents a temperature control system,moreover,through the polishing experiments show the need for temperature control.%在化学机械抛光（CMP）过程中,温度是影响晶片最终抛光效果的主要因素之一,采用合理的温度控制方法,把温度控制在一定的范围内才能满足化学机械抛光的工艺要求。通过化学机械抛光机理分析阐述了抛光过程中热量产生的根源,介绍了一种温度控制系统的设计原理,并通过抛光实验验证并说明了温度控制的必要性。