聚光背结背接触太阳电池发射区半宽度的优化研究

摘要

利用TCAD半导体器件仿真软件对中低倍聚光光伏系统中应用的N型叉指背接触(IBC)单晶硅太阳电池的电学性能进行了仿真研究.全面系统地分析了在不同聚光比情况下,单元电池发射区半宽度对聚光IBC太阳电池短路电流密度、开路电压、填充因子及转换效率的影响.仿真结果表明:聚光IBC太阳电池的电学性能受到单元电池发射区半宽度和聚光比的显著影响.在不同的聚光比情况下,存在最优的发射区半宽度,使得聚光IBC太阳电池转换效率最高.随着聚光比的增大,最优的发射区半宽度减小.虽然增大聚光比可提高聚光IBC太阳电池的转换效率,但同时减小了最优的发射区半宽度及参考范围,增加了聚光IBC太阳电池的制备难度.%The electrical properties of N-type interdigitated back contact (IBC) mono-crystalline silicon solar cells used in medium and low concentrating photovoltaics (CPV) systems were studied by using the TCAD semiconductor device simulation software.The influences of the emitter half width on concentrator IBC solar cells'' short-circuit current density, open-circuit voltage, filling factor and conversion efficiency were analyzed comprehensively and systematically under different concentration ratioes.The simulation results show that the concentrator IBC solar cells'' electrical properties are significantly affected by the emitter half width of unit solar cells and the concentration ratio.Under the variation of the concentration ratio, there is an optimal emitter half width to make concentrator IBC solar cells'' conversion efficiency reach maximum.With the increasing of the concentration ratio, the optimal emitter half width decreases.Although the concentrator IBC solar cells'' conversion efficiency can be improved by the concentration ratio''s increasing, but the optimal emitter half width and its range decrease simultaneously,which increases the preparation difficulty of concentrator IBC solar cells.