四氯化硅等离子体氢化技术研究进展

摘要

改良西门子法是生产多晶硅的主流工艺，四氯化硅的氢化技术是其改良的关键。传统的热氢化和冷氢化方法存在着能耗高和转化率低的缺点。本文介绍了四氯化硅制备三氯氢硅的等离子体氢化技术，概述了热等离子氢化方法，主要包括直流放电等离子体法、高压射频等离子体法、低压射频等离子体法、微波等离子体法等，简述了冷等离子氢化方法，并对介质阻挡放电等离子体法进行了介绍和实验探索。对各种等离子体氢化方法进行了综合性的分类和分析讨论，指出了现存各方法的优缺点，提出了等离子氢化技术在工业化时的关键难题，并对各种方法的应用前景进行了展望。%The modified Siemens method is the mainstream process of polysilicon production,of which silicon tetrachloride hydrogenation technology is the critical improvement. Traditional thermal hydrogenation and low-temperature hydrogenation suffer from the shortcomings of high energy consumption and low conversion rate. This review gives a general introduction of the preparation of trichlorosilane by plasma hydrogenation of silicon tetrachloride,which can be classified into thermal and cold plasma hydrogenation methods. Thermal plasma hydrogenation methods are presented, mainly including DC discharge plasma,high pressure RF plasma,low pressure RF plasma,and microwave plasma method. The cold plasma hydrogenation methods are also discussed,with a further introduction and experimental exploration of the dielectric barrier discharge (DBD) plasma method. Through comprehensive classification and discussion,key challenges in industrialization of plasma hydrogenation are brought forward , and the advantages and disadvantages of the methods are summarized,and the application foreground is expected.