应变Si NMOSFET阈值电压集约物理模型

摘要

The development of strained-Si physical compact threshold voltage model is based on Poisson’s equation, using the gradual channel approximation (GCA) and coherent quasi-two-dimensional (2D) analysis, as well as taking into account the effects of short channel effect (SCE), narrow channel effect (NCE), non-uniform doping effect, and drain-induced barrier lowering (DIBL) effect. Moreover, the threshold voltage parameters are extracted from the experimental results by software. Finally, the validity of our model is derived from the comparison of our simulation results. The proposed model may be useful for the design and simulation of very large scale integrated circuits (VLSI) made of strained-Si.%　　本文采用渐变沟道近似和准二维分析的方法，通过求解泊松方程，建立了应变Si NMOSFET阈值电压集约物理模型。模型同时研究了短沟道，窄沟道，非均匀掺杂，漏致势垒降低等物理效应对阈值电压的影响。采用参数提取软件提取了阈值电压相关参数，通过将模型的计算结果和实验结果进行对比分析，验证了本文提出的模型的正确性。该模型为应变Si超大规模集成电路的分析和设计提供了重要的参考。