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Circuit design in nano-scale CMOS era

机译:纳米CMOS时代的电路设计

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摘要

Moore's law has driven today's CMOS technology well into the nano-scale regime. For over four decades, the relentless technology scaling has been the main growth engine for the semiconductor industry in bringing out ever-increasing performance to the end-user while lowering product cost. But the miniaturization of CMOS transistor has led to many new challenges and increasing difficulties in achieving robust circuit design to meet power and performance needs along with high-volume manufacturing (HVM) requirements. It is particularly challenging in designing embedded memory and analog circuits on a leading edge logic process in which the transistor-induced variations pose a growing hurdle in achieving the robustness of the design as the technology scaling continues. Technology and design co-optimization has become essential for the success in developing future VLSI circuits.
机译:摩尔定律已将当今的CMOS技术推向纳米尺度。在过去的四十年中,无休止的技术扩展一直是半导体行业的主要增长引擎,可以为最终用户带来不断提高的性能,同时降低产品成本。但是,CMOS晶体管的小型化带来了许多新的挑战,并且在实现坚固的电路设计以满足功率和性能需求以及大批量制造(HVM)要求方面,也面临着越来越多的挑战。在前沿逻辑过程中设计嵌入式存储器和模拟电路时尤其具有挑战性,随着技术的不断发展,晶体管引起的变化对实现设计的健壮性构成越来越大的障碍。技术和设计的共同优化对于成功开发未来的VLSI电路至关重要。

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