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Green transistors to green architectures

机译:从绿色晶体管到绿色架构

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摘要

This talk will highlight different generations of energy-efficient device architectures that enable aggressive supply voltage reduction. First, we will discuss the impact of the introduction of a new gate stack with high-K dielectrics and the use of multigate control structures. Next, we will show that incorporation of ultra-high mobility compound (III-V) semiconductors along with corresponding changes in the device channel structure enables supply voltage reduction to below 500mV. Further reduction in the supply voltage to below 250mV range can be achieved through abrupt turn-on exploiting the phenomena of inter-band tunneling in novel vertical transistor architectures. The second part of this talk will focus on new challenges and opportunities in designing circuits and architectures using these emerging device architectures
机译:本演讲将重点介绍可大幅降低电源电压的新一代节能设备架构。首先,我们将讨论引入具有高K电介质的新栅极叠层以及使用多栅极控制结构的影响。接下来,我们将证明,结合超高迁移率化合物(III-V)半导体以及器件沟道结构的相应变化,可使电源电压降低至500mV以下。通过利用新颖的垂直晶体管架构中的带间隧穿现象的突然开启,可以将电源电压进一步降低至250mV以下。本讲座的第二部分将重点讨论使用这些新兴的设备架构设计电路和架构方面的新挑战和机遇

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