Low voltage tunnel transistor architecture and its viability for energy efficient logic applications

摘要

Since 1926 it is well accepted that the continuous nonzero nature of solutions to Schrodinger's wave equation used to represent electrons, even in classically forbidden regions of negative kinetic energy, allows for a finite and tunable probability of tunneling from one classically allowed region to another (for example band to band tunneling in a semiconductor). We have recently initiated the investigation of a novel transistor architecture based on such tunneling mechanism as a step towards exploring steep switching transistors for energy efficient logic applications. In this seminar, I will attempt to address the following topics regarding the tunnel transistor architecture: a) the choice of appropriate materials to tune the transfer characteristics over a specified gate swing b) the characteristic screening lengths to observe saturation in the output characteristics of the device needed to provide gain c) an effective way to estimate the switching speed of such devices and d) the importance(if any) of nonequilibrium carrier dynamics on the device terminal characteristics.