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Atomic-scale Mechanisms of Growth and Doping of Graphene Nano-Ribbons

机译:石墨烯纳米带的生长和掺杂的原子尺度机理

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摘要

Control over structural and electronic properties of graphene samples is necessary for the fabrication of nano-electronic devices. Here we report the results of first-principles quantum-mechanical studies on the growth and doping of graphene nanoribbons (GNR). We find that hydrogenation of open-ended carbon nanotubes (CNT) can lead to successive breaking of tip C-C bonds. If enough hydrogen atoms are supplied then the CNTs unzip to GNRs with specific widths and edge morphologies. We also examine the possibilities that ammonia-related species can inject carriers in graphene. We show that NH3 molecules have a complex dynamics on graphene. Annealing in ammonia can result in the formation of donors on the graphene basal plane, or the de-activation of dopants on graphene and at GNR edges. The results explain available experimental data and suggest new ways to optimize the properties and performance of GNR-based systems.
机译:对石墨烯样品的结构和电子性质的控制对于制造纳米电子器件是必需的。在这里,我们报告石墨烯纳米带(GNR)的生长和掺杂的第一性原理量子力学研究的结果。我们发现开放式碳纳米管(CNT)的氢化会导致尖端C-C键的连续断裂。如果提供了足够的氢原子,则CNT会解压缩为具有特定宽度和边缘形态的GNR。我们还研究了与氨有关的物质可以将载流子注入石墨烯的可能性。我们表明,NH3分子在石墨烯上具有复杂的动力学。氨气退火会导致在石墨烯基面上形成施主,或使石墨烯上和GNR边缘的掺杂剂失活。结果解释了可用的实验数据,并提出了优化基于GNR的系统的性能和性能的新方法。

著录项

  • 来源
  • 会议地点 Boston MA(US);Boston MA(US)
  • 作者

    L. Tsetseris; S. T. Pantelides;

  • 作者单位

    Department of Physics, National Technical University of Athens, GR-15780 Athens, Greece,Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235, USA;

    Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235, USA,Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA;

  • 会议组织
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 半导体技术;
  • 关键词

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