首页> 外国专利> SYSTEMS AND METHODS FOR LOW TEMPERATURE GROWTH OF PRISTINE, DOPED AND NANOPOROUS GRAPHENE FILMS

SYSTEMS AND METHODS FOR LOW TEMPERATURE GROWTH OF PRISTINE, DOPED AND NANOPOROUS GRAPHENE FILMS

机译:原始,掺杂和纳米孔石墨烯薄膜低温生长的系统和方法

摘要

Novel synthetic methods to produce layers or films and flakes of pristine graphene, heteroatom-doped graphene, nanoporous graphene or heteroatom-doped nanoporous graphene using specially designed molecular precursors at temperatures as low as 160 C using a chemical vapor deposition (CVD) system. The methods enable the realization of graphene-based electronics and technologies due to the low-temperature synthesis, large-area coverage, and scalability of the CVD method by taking advantage of the precursors tendency to polymerize and fuse once on the catalytic metal substrates.
机译:新的合成方法,用于使用化学气相沉积(CVD)系统在低至160℃的温度下使用特殊设计的分子前体,产生原始石墨烯,杂原子石墨烯,纳米多孔石墨烯或杂原子掺杂的纳米电孔石墨烯的新型合成方法。该方法通过利用前体倾向于在催化金属衬底上促进细化和保险丝一次,使得通过低温合成,大面积覆盖率和CVD方法的可扩展性来实现基于石墨烯的电子和技术。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号