Effect of Top Electrode Material on Resistive Switching Characteristics in MnO_2 Nonvolatile Memory Devices

摘要

The influence of top electrode material on the resistive switching properties of MnO_2-based memory film using Pt as a bottom electrode was investigated in this study. In comparison with Pt/MnO_2/Pt and Al/ MnO_2/Pt devices, the Ti/ MnO_2/Pt device exhibits resistive switching current-voltage (I-V ) curve, which can be traced and reproduced more than 10~5 times only showing a little decrease of resistance ratio between high and low resistance states. Furthermore, transmission electron microscopy analyses are used to confirm the crystalline structure of MnO_2 on Pt bottom electrode. Secondary ion mass spectrometry reveals a change of oxygen distribution in MnO_2 thin film due to material characteristic of variant top electrodes. We suggest that the interface between MnO_2 and electrodes play an important role on the resistive switching behaviors.