DEUTERIUM RETENTION IN SI DOPED CARBON FILMS

摘要

Deuterium retention, solubility and out-diffusion have been studied in silicon doped carbon films produced by physical vapor deposition. The deuterium concentration profiles were measured by the time-of-flight elastic recoil detection analysis technique and secondary ion mass spectrom-etry. The D retention arid solubility were measured in D implanted carbon samples. The out-diffusion of D was investigated in D co-deposited samples. The solubility of D was shown to increase as a function of Si concentration in the co-deposited samples while in the implanted samples no dependence of the Si content was observed. It was proposed that annealing behavior of deuterium has a trapping-like character.