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Characteristics of vacuum breakdown field and comparison of field enhancement factor β in CuCr electrodes with slit configuration

机译:狭缝配置真空击穿场的真空击穿场特征及CUCR电极中的现场增强因子β

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A contact electrode of vacuum interrupter (VI) has slit parts on the electrode surface to control the vacuum arc during the current interruption. The edge configuration of the slit is important for the withstand performance of high voltage application for VI. We investigated the effect of the curvature radius of slit's configuration on the field enhancement factor β and the characteristics of vacuum breakdown for the slit electrodes made of CuCr alloy simplified simulating the AMF-electrode. As the results, the round chamfered configuration at the edge of slit increases the breakdown field, because of the reduction of pre-breakdown current flowing, that is, small field emission current. This is due to be small β-value by rounding chamfering of the edge at the slit. The BD field of the slit electrode can be improved by rounding the edge of the end of the slit more than 1 mm curvature radius, and the curvature of 0.5 mm radius for R0.5 slit electrode had almost little effect on improving the BD field owing to manufacturing inadequate curvature at the edge of slit.
机译:真空断续器(VI)的接触电极在电极表面上具有狭缝部分,以在电流中断期间控制真空电弧。狭缝的边缘配置对于耐高压施加VI的耐受性能是重要的。我们研究了狭缝配置曲率半径对现场增强因子β的影响,以及用于模拟AMF电极的CuCr合金制成的狭缝电极的真空击穿特性。结果,由于预击穿电流的降低,狭缝边缘处的圆形倒角构造增加了击穿场,即小型场发射电流。这是由于在狭缝处的边缘的倒角倒角是小的β值。通过舍入超过1mm曲率半径的狭缝的端部的边缘可以提高狭缝电极的BD场,并且R0.5狭缝电极的0.5mm半径的曲率几乎没有对改善BD场的影响在狭缝边缘的制造不足的曲率。

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