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Effect of thickness on the structural, electrical and optical properties of ZnO films deposited by MBE

机译:厚度对MBE沉积的ZnO膜结构,电和光学性质的影响

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A set of ZnO films of different thickness have been deposited on sapphire substrates using molecular beam epitaxy (MBE) by varying the growth time and the effect of film thickness on the structural, electrical and optical properties have been investigated. The X-ray diffraction (XRD) results indicate that the full width at half maximum (FWHM) of the (002) diffraction peak is decreased as the film thickness increasing, and the stress along c-axis is stable. Scanning electron microscope (SEM) measurement shows that the grains become more uniform as the film grows thicker and the film surface present distinct hexagon shape as the film is grown up to a thickness of 500nm. The optical absorbance, Hall mobility and photoluminescence (PL) intensity are increased in accordance with the thickness of the film.
机译:使用分子束外延(MBE)通过改变生长时间,研究了一组不同厚度的ZnO薄膜在蓝宝石基板上沉积了通过改变生长时间,并研究了膜厚度对结构,电气和光学性质的影响。 X射线衍射(XRD)结果表明,随着膜厚度的增加,(002)衍射峰的半最大(FWHM)的全宽度降低,并且沿C轴的应力是稳定的。扫描电子显微镜(SEM)测量表明,随着薄膜的生长较厚,薄膜表面存在明显的六边形,随着薄膜的厚度为500nm,薄膜表面呈现更均匀。根据薄膜的厚度增加光学吸收,霍尔迁移率和光致发光(PL)强度。

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