A COMPARATIVE STUDY OF ERBIUM OXIDE AND GADOLINIUM OXIDE HIGH-K DIELECTRIC THIN FILMS GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOUR DEPOSITION (MOCVD) USING beta-DIKETONATES AS PRECURSORS

摘要

Continuing scaling down of CMOS-based devices leads to the serious problem of gate leakage (tunneling) current. Various materials, such as Al-2O-3, HfO-2, Ta-2O-5 etc., are currently under consideration as candidates for alternative gate dielectric for the next generations of CMOS-based devices [1]. In the same vein, erbium oxide (Er-2O-3) and gadolinium oxide (Gd-2O-3) also have been examined, because they offer a higher dielectric constant (epsilon~14) than does SiO-2 (epsilon~ 3.9), large band gap (~5.6eV), as well as thermodynamical and chemical stability with silicon [2-5].