首页> 外文会议>European workshop of the European Microbeam Analysis Society (EMAS) on modern developments and applications in microbeam analysis >Application of orientation imaging to the study of substructural development in cold deformed Al-0.3Mn single crystal of {110}<112> orientation
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Application of orientation imaging to the study of substructural development in cold deformed Al-0.3Mn single crystal of {110}<112> orientation

机译:取向成像在{110} <112℃的冷变形Al-0.3%Mn单晶中的亚结构发育研究

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A systematic study of the deformation microstructures over 3 perpendicular surfaces was carried out in the present work in order to correlate better the substructure with slip patterns, initial and final crystal orientation, and the macroscopic coordinate system. The microstructure and texture evolution of high purity Al-0.3 wt% Mn alloy of initial near brass {110}<112> (or Bs) orientation, channel-die compressed to the strain level of 1.5, were studied by TEM (including TEM orientation mapping) and high-resolution FEG-SEM/EBSD techniques to observe crystal subdivision deformation patterns at the microscopic scale. The grain orientation dependent structures were analyzed in terms of active slip systems focussing on the crystallography of extended planar boundaries. It was concluded that the type of dislocation structure (one or two sets of microbands) in {110}<112> oriented crystallites, at moderate strains (< 1.5) depended strongly on the crystallographic grain orientation. In this non-ideal initial crystal orientation the applied deformation mode activates a double slip, of which one system predominates and leads to further rotation away from Bs. A general rotation combined with a wide orientation spread is observed after a strain up to 1.5. The microband boundary alignment corresponds very well to the traces of crystallographic {111} planes, on which most of the slip occurs.
机译:在本作工作中进行了对3个垂直表面上的变形微观结构的系统研究,以便在具有滑动图案,初始和最终晶体取向和宏观坐标系和宏观坐标系的下部结构之间进行相关性。通过TEM研究了高纯度近代近黄铜{110} <112>(或BS)取向,沟道芯片的初始近代的高纯度Al-0.3wt%Mn合金的微观结构和纹理演化,压缩至1.5的应变水平(包括TEM定位)映射)和高分辨率Feg-SEM / EBSD技术,用于观察微观尺度的晶体细分变形模式。根据焦点的主动滑移系统分析晶粒取向依赖性结构,其侧重于扩展平面边界的晶体学。结论是,在中等菌株(<1.5)时{110} <112>取向微晶中的位错结构(一种或两组微多豆)的类型依赖于晶粒晶粒取向。在这种非理想的初始晶体取向中,施加的变形模式激活一个双滑移,其中一个系统主要占据偏移并导致进一步旋转BS。在应变高达1.5后,观察到与宽方向扩散结合的一般旋转。微型和缩放边界对准对应于晶体{111}平面的痕迹,其中大部分滑动发生在其中。

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