High Performance Cu-doped SiO_2 ReRAM by a Novel Chemical Soak Method

摘要

In this paper, a novel chemical soak method is proposed to fabricate a Cu-doped SiO_2 ReRAM device. This method can easily fabricate a lightly Cu-doped SiO_2 film and effectively improve the reliability of the conventional Cu-doped SiO_2 ReRAM device. A reproducible bipolar switching characteristic with set/reset voltage (ca. 2.5 V/-0.7 V) is performed in this device and the electrical conduction in HRS and LRS are related to Poole-Frenkel and Ohmic conduction, respectively. Excellent performance in terms of high on/off ratio (～10~6), narrow range distribution of set and reset voltages, stable data retention, and up to 110 times switching cycles has been achieved by this novel chemical soak method for Cu-doped SiO_2 ReRAM device.