Response Time Investigation Based on GaAs Position Sensitive Detector

摘要

This work reports on response times of a GaAs-based p-i-n Position-Sensitive Detector (PSD) operated in lateral and transverse photovoltaic modes. Visible light spots with wavelength values of 405, 532, and 638 nm were employed for measuring both static and dynamic properties of the proposed p-i-n PSD. The extracted sensitivity is 4.1 mV/mm for the 405 nm light with a power of 3 mW while it was 14.3 mV/mm for the 638 nm light. The measured nonlinearities were 1.0%～1.9%, 1.7%～2.25%, and 0.25%～1.25% for 405, 532, and 638 nm lights, respectively, with a power of 1 to 3 mW. Experimental results reveal that the shortest response time is available for the PSD tested with the 532 nm light.