Characterization and Simulation of PbS Photoconductors Prepared by Chemical Bath Deposition

摘要

The present work deals with the characterization and simulation of lead sulfide (PbS) photoconductors infrared detectors growth by Chemical Bath Deposition (CBD) method. Three different solutions bath are used in order to explore the doping effect and oxidant agent on detection capabilities. Photoelectrical characterization indicates that detectors performances depend strongly on oxidant and doping agents. A simulation study with surface state model is also presented. The physical parameters are deduced and are found to be in agreement with those published in the literature.