Monolithically integrated GaN-based HEMT-LED and InGaN/GaN photodiodes for on-chip optical interconnects

摘要

Summary form only given. This paper demonstrates for the first time a monolithically integrated GaN-based voltage-controlled light emitters (HEMT-LED) and photodiodes (PD) on a GaN-on-sapphire platform for on-chip optical interconnect applications. Potentially used in an in-plane data communication system, the integrated HEMT-LED is utilized to deliver an optical signal through light emission modulated by the integrated HEMT. The integrated PD serves as a receiver of the optical signal. Excellent output characteristics without current collapse were observed for the integrated HEMT under violet light irradiation from the integrated LED. Voltage-controlled light emission from the integrated HEMT-LED was received by the on-chip PD, which exhibited modulated photocurrent current correspondingly.