首页> 外文会议>European Photovoltaic Solar Energy Conference >SYNTHESIS AND CHARACTERIZATION OF THALLIUM SULPHIDE/CADMIUM SULPHIDE AND LEAD SULPHIDE/CADMIUM SULPHIDE THIN FILMS GROWN IN A POLYMER MATRIX BY CHEMICAL BATH DEPOSITION (CBD) METHOD
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SYNTHESIS AND CHARACTERIZATION OF THALLIUM SULPHIDE/CADMIUM SULPHIDE AND LEAD SULPHIDE/CADMIUM SULPHIDE THIN FILMS GROWN IN A POLYMER MATRIX BY CHEMICAL BATH DEPOSITION (CBD) METHOD

机译:化学浴沉积(CBD)法在聚合物基质中生长的硫化物/硫化铊/硫化镉/硫化镉薄膜的合成与表征

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Chemical bath deposition of semiconductor thin films is by now recognized as a versatile low-cost method to produce thin films of I-VI, II-VI, III-V, IV-VI and V-VI compounds. This technique is the most cost saving, convenient and simple technique, which is highly reproducible. It makes use of the fact that films can be deposited on substrates whether metallic or not by dipping them into suitable solution baths containing metal salts without applying any external field. CdS/PbS and CdS/TlS thin films were synthesized on the glass substrate by this technique within the pores of polyvinyl alcohol (PVA) at room temperature. The chemical bath for the deposition of CdS is made up of solution of cadmium chloride (CdCl_2), ammonia (NH_3), thiourea ((NH_2) _2CS) and PVA solution. The chemical bath for the deposition of PbS thin film on clean microscope glass slide was achieved by using lead nitrate (Pb(NO_3)_2), sodium hydroxide (NaOH), thiourea ((NH_2)_2CS) and PVA solution. Thallium sulphide (TlS) thin films were deposited on glass substrate using a bath that contains thallium nitrate, sodium citrate, sodium hydroxide, thiourea and PVA solution. A chemical synthesis process for the fabrication of CdS/PbS and CdS/TlS thin films are presented herein. In this present work, these films were annealed in air at 373K and characterized for the structural, morphological and optical properties. These properties were studied by means of X-ray diffraction (XRD), scanning electron microscopy (SEM) and optical spectrophotometer for their potential application in solar energy devices. The optical properties revealed the presence of direct band gaps with energies 1.20 eV for PbS/CdS and 1.40 eV for TlS/CdS thin films. The films show poor transmittance in the visible and near infrared region of the solar spectrum.
机译:半导体薄膜的化学浴沉积现在被认为是一种多功能的低成本方法,以产生I-VI,II-VI,III-V,IV-VI和V-VI化合物的薄膜。该技术是最成本的节省,方便简单的技术,这是高度可重复的。它利用了薄膜可以在底物上沉积金属,无论是否通过浸入含有金属盐的合适溶液浴,而不涂抹任何外场。通过该技术在室温下通过该技术在玻璃基板上合成CDS / PBS和CdS / TLS薄膜。用于沉积CDS的化学浴由氯化镉(CDCl_2),氨(NH_3),硫脲((NH_2)_2CS)和PVA溶液的溶液组成。通过使用硝酸铅(Pb(NO_3)_2),氢氧化钠(NaOH),硫脲((NH_2)_2CS)和PVA溶液,实现了用于沉积PBS薄膜的化学浴。使用含有硝酸铊,柠檬酸钠,氢氧化钠,硫脲和PVA溶液的浴将硫化物(TLS)薄膜沉积在玻璃基板上。本文介绍了用于制备CDS / PBS和CDS / TLS薄膜的化学合成方法。在本工作中,将这些薄膜在373k的空气中退火,并表征结构,形态和光学性质。通过X射线衍射(XRD),扫描电子显微镜(SEM)和光学分子分光光度计研究这些性质,用于其在太阳能装置中的潜在应用。光学性质揭示了PBS / Cds的PBS / Cds和1.40eV的能量1.20eV的直接带间隙的存在。薄膜在太阳光谱的可见和近红外区域中显示出差的透射率。

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