SURFACE REACTIONS IN LOW-TEMPERATURE PLASMA DEPOSITION OF SILICON-OXIDE FILMS

摘要

Infrared reflection absorption measurement was performed during plasma-enhanced chemical vapor deposition of silicon dioxide films at room temperature. Hydrocarbon contaminants adsorbed onto growing film surface are oxidized by oxygen radicals in plasma resulting functional groups which include C=O and C-O bondings. These groups exist only near the surface and arc hydrolyzed rapidly after exposure to air.