Si-N coating by CVD method applying pulsed DC for plasma formation was carried out. To know the effect of the difference of gas species on coating composition, nitrogen and ammonia gases were compared. when nitrogen gas was used, nitrogen contents in Si-N films showed increment up to 30at.% with the increase of DC power. On the other hand, the increment of nitrogen contents of the films up to 50at.%, which approaches to the stoichiometric content of Si_3N_4, was obtained with the increase of DC power when ammonia gas was used. In the case of nitrogen gas application, Fe contamination, which was induced from sample pedestal, was detected in the films by XPS measurement. On the other hand, non-impurity containing in the films observed when ammonia gas used. By X-ray diffraction measurement, Obtained films were determined in amorphous structure., The increment of hardness value up to Hk 1770 was obtained when 0.5kW DC power used.
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