Comparison of Static and Switching Characteristics of 1200V 4H-SiC BJT and 1200V Si-IGBT

摘要

In this paper, static and switching characteristics of a 1200V 4H-SiC BJT at bus voltage of 600V are reported for the first time. Comparison was made between 1200V SiC BJT and 1200V Si IGBT. The experimental data show the SiC BJT have much smaller conduction and switching losses than the Si IGBT. Our previous work showed a large RBSOA of SiC BJT. No second breakdown, which is the most unattractive aspect of the Si BJT, was observed in the 1200V SiC BJT. The results prove that, unlike Si BJTs, BJTs in 4H-SiC are good competitors to Si IGBTs.